Publications


  1. Band gap bowing in NixMg1-xO
    Scientific Reports 6 (2016)
    See more information →

  2. Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen
    Applied Physics Letters 108 (2016)
    See more information →

  3. Composition measurement of epitaxial xGa1−xN films
    Semiconductor Science and Technology 31 064002 (2016)
    See more information →

  4. Valence band offsets of Sc x Ga 1− x N/AlN and Sc x Ga 1− x N/GaN heterojunctions
    Journal of Physics D: Applied Physics 49 265110 (2016)
    See more information →

  5. Dislocation core structures in (0001) InGaN
    Journal of Applied Physics 119 (2016)
    See more information →

  6. On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors
    The Journal of Chemical Physics 143 144104 (2015)
    See more information →

  7. Band gaps of wurtzite ScxGa1-xN alloys
    Applied Physics Letters 106 132103 (2015)
    See more information →

  8. Segregation of In to Dislocations in InGaN
    Nano Letters 15 923-930 (2015)
    See more information →

  9. Band gap and electronic structure of MgSiN2
    Applied Physics Letters 105 112108 (2014)
    See more information →

  10. Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems
    Water Research 66 338 - 349 (2014)
    See more information →

  11. Structure and electronic properties of mixed (a+c) dislocation cores in GaN
    Journal of Applied Physics 116 063710 (2014)
    See more information →

  12. ScGaN and ScAlN: emerging nitride materials
    Journal of Materials Chemistry A 2 6042–6050 (2014)
    See more information →

  13. Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions
    Applied Physics Letters 104 101906 (2014)
    See more information →

  14. The dissociation of the (a+c) dislocation in GaN
    Philosophical Magazine 93 3925–3938 (2013)
    See more information →

  15. Mg doping affects dislocation core structures in GaN
    Physical Review Letters 111 025502 (2013)
    See more information →

  16. Elastic constants and critical thicknesses of ScGaN and ScAlN
    Journal of Applied Physics 114 243516 (2013)
    See more information →

  17. Modification of carrier localisation in basal-plane stacking faults: the effect of Si-doping in a-plane GaN
    Physica Status Solidi. B: Basic Research 249 498 (2012)
    See more information →

  18. On the origin of blue-green emission from heteroepitaxial non-polar a-plane InGaN quantum wells
    Physica Status Solidi. C: Current Topics in Solid State Physics 9 465 (2012)
    See more information →

  19. Growth, microstructure and morphology of epitaxial ScGaN films
    Physica Status Solidi. A: Applications and Materials Science 209 33–40 (2012)
    See more information →

  20. Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphire
    Physica Status Solidi. B: Basic Research 249 494 (2012)
    See more information →

  21. Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
    Journal of Crystal Growth 337 81–86 (2011)
    See more information →

  22. The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
    Japanese Journal of Applied Physics 50 (2011)
    See more information →

  23. The effects of Si doping on dislocation movement and tensile stress in GaN films
    Journal of Applied Physics 109 (2011)
    See more information →

  24. Response to "Comment on ’The effects of Si doping on dislocation movement and tensile stress in GaN films’" [J. Appl. Phys. 109, 073509 (2011)]
    Journal of Applied Physics 110 (2011)
    See more information →

  25. The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates
    Physica Status Solidi. A: Applications and Materials Science 208 1529–1531 (2011)
    See more information →

  26. Characterising the degree of polarisation anisotropy in an a‐plane GaN film
    Physica Status Solidi. C: Current Topics in Solid State Physics 7 1897–1899 (2011)
    See more information →

  27. Magnetism in GaN layers implanted by La, Gd, Dy and Lu
    Thin Solid Films 519 6120 (2011)
    See more information →

  28. Dislocation Climb in c-Plane AlN Films
    Applied Physics Express 4 (2011)
    See more information →

  29. Light-emitting diodes and their applications in energy-saving lighting
    Proceedings of the Institution of Civil Engineers 1 17 (2011)
    See more information →

  30. Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a‐plane GaN
    Physica Status Solidi. C: Current Topics in Solid State Physics 7 2088–2090 (2011)
    See more information →

  31. Quantification of unintentional doping in non‐polar GaN using scanning capacitance microscopy
    Physica Status Solidi. C: Current Topics in Solid State Physics 7 1875–1877 (2010)
    See more information →

  32. Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy
    Journal of Physics D-Applied Physics 43 (2010)
    See more information →

  33. The effects of annealing on non-polar (1 1 -2 0) a-plane GaN films
    Journal of Crystal Growth 312 3536–3543 (2010)
    See more information →

  34. Dislocation movement in GaN films
    Applied Physics Letters 97 (2010)
    See more information →

  35. The impact of ScO(x)N(y) interlayers on unintentional doping and threading dislocations in GaN
    16th International Conference on Microscopy of Semiconducting Materials 209 (2010)
    See more information →

  36. Electronic and optical properties of nonpolar a-plane GaN quantum wells
    Physical Review B 82 (2010)
    See more information →

  37. Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers
    Physica Status Solidi. C: Current Topics in Solid State Physics 7 1778–1780 (2010)
    See more information →

  38. The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies
    Journal of Electronic Materials 39 656–662 (2010)
    See more information →

  39. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
    Journal of Applied Physics 108 (2010)
    See more information →

  40. Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm
    Journal of Applied Physics 108 (2010)
    See more information →

  41. Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire
    Journal of Crystal Growth 312 363–367 (2010)
    See more information →

  42. Defect reduction in (11-22) semipolar GaN grown on m-plane sapphire using ScN interlayers
    Applied Physics Letters 94 (2009)
    See more information →

  43. Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices
    Applied Physics Letters 94 (2009)
    See more information →

  44. The Spatial Distribution of Threading Dislocations in Gallium Nitride Films
    Advanced Materials 21 3941+ (2009)
    See more information →

  45. Defect reduction in non-polar (11-20) GaN grown on (1-102) sapphire
    Physica Status Solidi. A: Applications and Materials Science 206 1190–1193 (2009)
    See more information →

  46. Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction
    Physica B-Condensed Matter 404 2189–2191 (2009)
    See more information →

  47. The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films
    Journal of Physics D-Applied Physics 42 (2009)
    See more information →

  48. Understanding x-ray diffraction of nonpolar gallium nitride films
    Journal of Applied Physics 105 (2009)
    See more information →

  49. Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy
    Journal of Applied Physics 106 (2009)
    See more information →

  50. Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
    Journal of Crystal Growth 311 2054–2057 (2009)
    See more information →

  51. Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
    Journal of Crystal Growth 311 3295–3299 (2009)
    See more information →

  52. X-ray diffraction of III-nitrides
    Reports on Progress in Physics 72 (2009)
    See more information →

  53. On the origin of threading dislocations in GaN films
    Journal of Applied Physics 106 (2009)
    See more information →

  54. Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
    Journal of Crystal Growth 311 3239–3242 (2009)
    See more information →

  55. Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy
    Journal of Applied Physics 106 (2009)
    See more information →

  56. Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers
    Physica Status Solidi. A: Applications and Materials Science 205 1064–1066 (2008)
    See more information →

  57. Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
    Journal of Crystal Growth 310 2746–2750 (2008)
    See more information →

  58. The effect of oxygen incorporation in sputtered scandium nitride films
    Thin Solid Films 516 8569–8572 (2008)
    See more information →

  59. The effect of wafer curvature on x-ray rocking curves from gallium nitride films
    Journal of Applied Physics 103 (2008)
    See more information →

  60. Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
    Journal of Applied Physics 102 (2007)
    See more information →

  61. Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
    Journal of Crystal Growth 308 302–308 (2007)
    See more information →

  62. Interlayer methods for reducing the dislocation density in gallium nitride
    Physica B-Condensed Matter 401 296–301 (2007)
    See more information →

  63. Dislocation reduction in gallium nitride films using scandium nitride interlayers
    Applied Physics Letters 91 (2007)
    See more information →

  64. Growth of low dislocation density GaN using transition metal nitride masking layers
    Journal of Crystal Growth 298 268–271 (2007)
    See more information →

  65. Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
    Journal of Applied Physics 100 (2006)
    See more information →

  66. Surface structures of scandium silicides grown on Si(111) studied by STM, AFM and electron diffraction
    Surface Science 600 4126–4131 (2006)
    See more information →

  67. Microstructure of epitaxial scandium nitride films grown on silicon
    Applied Surface Science 252 8385–8387 (2006)
    See more information →

  68. Chemical and physical analysis of acetate-oxide sol-gel processing routes for the Y-Ba-Cu-O system
    Journal of Sol-Gel Science and Technology 36 87–94 (2005)
    See more information →

  69. Microstructure and strain-free lattice parameters of ScxGa1-xN films
    MRS Proceedings 892 723–727 (2005)
    See more information →


Department of Materials
Imperial College London
Royal School of Mines
Exhibition Road
London, SW7 2AZ - UK