Structure and electronic properties of mixed (a+c) dislocation cores in GaN

Horton, M. K. and Rhode, S. L. and Moram, M. A.

Abstract.

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a+c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the {1 2̅ 1 0} planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

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Department of Materials
Imperial College London
Royal School of Mines
Exhibition Road
London, SW7 2AZ - UK