Segregation of In to Dislocations in InGaN

Horton, Matthew K. and Rhode, Sneha and Sahonta, Suman-Lata and Kappers, Menno J. and Haigh, Sarah J. and Pennycook, Timothy J. and Humphreys, Colin J. and Dusane, Rajiv O. and Moram, Michelle A.

Abstract.

Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1–xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa1–xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.

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Department of Materials
Imperial College London
Royal School of Mines
Exhibition Road
London, SW7 2AZ - UK