The Spatial Distribution of Threading Dislocations in Gallium Nitride Films
Moram, M A and Oliver, R A and Kappers, M and Humphreys, C J
Spatial analysis techniques are used to study threading dislocations (TDs) at the surfaces of a wide range of GaN films. In all films, the dislocation positions are consistent with a spatially random TD generation process followed by movement of dislocations, but are inconsistent with the spatial distribution of dislocations expected at island coalescence boundaries.
Department of Materials
Imperial College London
Royal School of Mines
London, SW7 2AZ - UK