Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers

Moram, M J and Kappers, M J and Humphreys, C J


This paper reports the properties of low dislocation density a -plane 11-20 GaN films grown on sapphire using 2 – 15 nm ScN interlayers (ILs). Dislocation densities decrease with increasing ScN IL thickness and the surface roughness for coalesced films remains low at 0.7 nm. X-ray diffraction data show a reduction in ω-scan FWHMs at all rotational positions and luminescence intensities increase compared to a control sample without a ScN IL. However, a slight increase in the prismatic stacking fault density is observed, compared to the control sample

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Department of Materials
Imperial College London
Royal School of Mines
Exhibition Road
London, SW7 2AZ - UK