The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies

Moram, M A and Gabbai, U E and Sadler, T C and Kappers, M J and Oliver, R A

Abstract.

Spatial analysis techniques were used to investigate defects and nanostructures in the III-nitride system. Dislocations in GaN films were distributed nonrandomly, forming both short-scale and large-scale linear arrays aligned along ⟨11-20⟩. Both low-density InGaN/GaN quantum dots (QDs) and In droplets on the surface of InAlN films were in spatially random positions and showed no spatial autocorrelation, but high-density InGaN/GaN QDs showed a tendency toward short-range ordering and all features showed a nonrandom size distribution. The spatial arrangements of defects and nanostructures relate to their generation processes and may also affect device properties.

Click here for publisher's website and PDF.



← Go back to publications list.

Department of Materials
Imperial College London
Royal School of Mines
Exhibition Road
London, SW7 2AZ - UK