The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies
Moram, M A and Gabbai, U E and Sadler, T C and Kappers, M J and Oliver, R A
Spatial analysis techniques were used to investigate defects and nanostructures in the III-nitride system. Dislocations in GaN films were distributed nonrandomly, forming both short-scale and large-scale linear arrays aligned along ⟨11-20⟩. Both low-density InGaN/GaN quantum dots (QDs) and In droplets on the surface of InAlN films were in spatially random positions and showed no spatial autocorrelation, but high-density InGaN/GaN QDs showed a tendency toward short-range ordering and all features showed a nonrandom size distribution. The spatial arrangements of defects and nanostructures relate to their generation processes and may also affect device properties.
Department of Materials
Imperial College London
Royal School of Mines
London, SW7 2AZ - UK