Response to "Comment on ’The effects of Si doping on dislocation movement and tensile stress in GaN films’" [J. Appl. Phys. 109, 073509 (2011)]
Moram, M A and Kappers, M J and Massabuau, F and Oliver, R A and Humphreys, C J
There is no abstract for this article.
Department of Materials
Imperial College London
Royal School of Mines
London, SW7 2AZ - UK