Response to "Comment on ’The effects of Si doping on dislocation movement and tensile stress in GaN films’" [J. Appl. Phys. 109, 073509 (2011)]

Moram, M A and Kappers, M J and Massabuau, F and Oliver, R A and Humphreys, C J


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Department of Materials
Imperial College London
Royal School of Mines
Exhibition Road
London, SW7 2AZ - UK